Micron Technology Inc.

History

Year	Detail
1978	Micron Technology Inc., is founded on Oct. 5, 1978, Micron's first contract was for the design of a 64K memory chip for Mostek Corporation.
1979	Micron's engineers created a newer, smaller version that was lauded as the smallest 64K DRAM design in the world. This innovative design led to the high-volume manufacturing of the company's first 64K product in 1981.
1980	The company breaks ground on its first fabrication site in Boise, Idaho.
1984	It has Unveiled the World's Smallest 256K DRAM Chip.
1987	Micron Brings 1-Megabit DRAM to Market: Micron's 1Mb DRAM enabled high-capacity SIMM modules that supported PCs equipped with Microsoft's new Windows OS.
1988	Introduced 256K video RAM and fast static RAM broadened Micron's product portfolio beyond traditional DRAM, enabling Micron to become a player in differentiated memory types.
1992	Launched the 16-megabit DRAM that replaced Micron's mainstay 4-megabit DRAM lineup. These higher-capacity chips coincided with Microsoft's release of Windows 3.1.
1998	Acquired Texas Instruments' worldwide memory operations.
1999	The Micron Foundation was established to advance STEM education and support communities, and it launched the industry's first DDR DRAM.
2000	Micron's innovative quad data rate (QDR) architecture effectively doubled the SRAM bandwidth for communication applications such as switches and routers.
2002	Demonstrated the Industry's First 1Gigabit DDR on 110nm Process.
2003	Developed a 1.3-megapixel CMOS Image Sensor, which is capable of making CMOS technology with image quality rivaling charge-coupled device (CCD) sensors.
2004	Unveiled Pseudo-Static RAM for Cell Phones and Develops the Industry's First 6F2 DRAM Cell.
2005	Micron and Intel form a NAND joint venture IM Flash Technologies and Micron Introduces High-Capacity, Low-Power Mobile LPDRAM.
2006	The company has acquired Lexar Media and has also unveiled the world's highest-density server memory module, Micron's 16GB DDR2.
2007	Developed Industry's First Pitch-Doubled NAND, Micron, and Intel First to Deliver Sub-40nm NAND Flash Memory.
2008	Micron and Nanya formed DRAM joint venture Inotera Memories.
2010	The company has acquired NOR manufacturer Numonyx B.V. from Intel, STMicroelectronics, N.V. and Francisco Partners.
2011	Micron and Intel Announce World's First 20nm MLC NAND, Micron Debuts Hybrid Memory Cube (HMC) Architecture.
2013	Acquired Elpida Memory Inc. and Rexchip Electronics Corporation and delivered the World's Smallest 16nm NAND Flash Device.
2015	It has acquired Tidal Systems, Convey Computer and Pico Computing. Micron and Intel Unveil 3D NAND, the Highest-Density Flash Ever Developed.
2016	Micron established its Center of Excellence for NAND in Singapore and also acquired Inotera Memories.
2017	Established its Center of Excellence for High-Volume DRAM in Taiwan and Technology Innovation Center of Excellence in Boise.
2018	Micron Ships Industry's First Quad-Level Cell NAND SSD and established its Center of Excellence for Long-Lifecycle Products in Manassas, Virginia.
2019	Announced advanced technology DRAM center in Hiroshima, Japan and acquired FWDNXT.
2021	Opened design center in Atlanta abd delivers the industry's first 1a DRAM technology.
2022	Micron marks the 50,000 patents milestone and invested up to $100 billion to build a mega fab in Clay, New York.
2023	Micron announces new semiconductor assembly and test facility in India, launches memory expansion module portfolio to accelerate CXL 2.0 adoption.